DocumentCode :
3397427
Title :
Structural, elastic, and electronic properties of topological insulators: Sb2Te3 and Bi2Te3
Author :
Koc, Hasan ; Mamedov, Amirullah M. ; Ozbay, Ekmel
Author_Institution :
Dept. of Phys., Siirt Univ., Siirt, Turkey
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
41
Lastpage :
44
Abstract :
We have performed a first principles study of structural, elastic, and electronic properties of rhombohedral Sb2Te3 and Bi2Te3 compounds using the density functional theory within the local density approximation. The lattice parameters of considered compounds have been calculated. The second-order elastic constants have been calculated, and the other related quantities such as the Young´s modulus, shear modulus, Poisson´s ratio, anisotropy factor, sound velocities, and Debye temperature have also been estimated in the present work. The calculated electronic band structure shows that Sb2Te3 and Bi2Te3 compounds have a direct forbidden band gap. Our structural estimation and some other results are in agreement with the available experimental and theoretical data.
Keywords :
Debye temperature; Poisson ratio; Young´s modulus; ab initio calculations; acoustic wave velocity; antimony compounds; bismuth compounds; density functional theory; elastic constants; elasticity; energy gap; lattice constants; narrow band gap semiconductors; shear modulus; topological insulators; Bi2Te3; Debye temperature; Poisson ratio; Sb2Te3; Young´s modulus; anisotropy factor; density functional theory; direct forbidden band gap; elastic properties; electronic band structure; electronic properties; first principles calculation; lattice parameters; local density approximation; rhombohedral compounds; second-order elastic constants; shear modulus; sound velocity; structural estimation; structural properties; topological insulators; Area measurement; Compounds; Density measurement; Mechanical factors; ab initio calculation; electronic structure; mechanical properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
Type :
conf
DOI :
10.1109/ISAF.2013.6748739
Filename :
6748739
Link To Document :
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