Title :
X-band MMIC broadband low-noise amplifiers based on 0.15 μm GaAs pHEMT technology
Author :
Mokerov, V.G. ; Babak, L.I. ; Fedorov, Yu.V. ; Cherkashin, M.V. ; Sheherman, F.I. ; Bugaev, A.S. ; Kuznetsov, A.L. ; Gnatyuk, D.L.
Author_Institution :
Inst. of Microwave Semicond. Electron., RAS, Moscow
Abstract :
The design and fabrication of 2- and 3-stage X-band MMIC broadband low-noise amplifiers (LNApsilas) based on 0.15 mum GaAs pHEMT technology is presented. The design and fabrication of 2- and 3-stage X-band MMIC broadband LNApsilas is described. LNApsilas are designed with using ldquovisualrdquo design CAD tools. MMICpsilas are implemented with 0.15 mum pHEMT GaAs technology. The measured scattering parameters and noise figure are presented. Amplifiers cover frequency range from 3 GHz to 14 GHz with the gain of 20....21 dB and 27...29 dB, correspondingly. MMIC LNApsilas can be used as building blocks in different microwave systems.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; wideband amplifiers; CAD tools; GaAs; X-band MMIC broadband low-noise amplifiers; frequency 3 GHz to 14 GHz; microwave systems; noise figure; pHEMT technology; scattering parameters; Broadband amplifiers; Design automation; Fabrication; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; PHEMTs; Scattering parameters;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676291
