Title :
Nanowires and Nanoneedles
Author :
Chang-Hasnain, C.J.
Author_Institution :
Univ. of California at Berkeley, Berkeley
fDate :
July 29 2007-Aug. 11 2007
Abstract :
We review the progress of synthesis, characterization and properties of lll-V compound semiconductor nanowires and nanoneedles grown on Si substrates at low temperature with CMOS compatible process.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOCVD; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wires; 2D electron confinement; CMOS compatible process; electrical properties; lll-V compound semiconductor; nanoneedles; nanowires; photoluminescence emission; silicon substrates; vapor-liquid-solid growth mechanism; wafer-scale MOCVD; Circuit synthesis; Electron optics; III-V semiconductor materials; Indium phosphide; Lattices; Nanowires; Optical materials; Optoelectronic devices; Substrates; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302856
