DocumentCode
3397498
Title
High power internally matched transistor of R&PC “Istok”
Author
Liapin, L.V. ; Manchenko, L.V. ; Pchelin, V.A. ; Tregubov, V.B.
Author_Institution
Fed. State Unitary Corp. R&PC Istok, Fryazino
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
69
Lastpage
70
Abstract
High power hermetically sealed, internally matched transistor for 3 cm wave length band applications with output power higher than 10 W, and associated gain higher than 13 dB, and efficiency higher than 30 % has been developed. Transistor is designed for continuous and pulse operation. Experimental results for 30 internally matched transistors are demonstrated.
Keywords
power transistors; continuous operation; high power hermetical sealed transistor; high power internal matched transistor; pulse operation; wavelength 3 cm; Frequency; Helium; IEEE catalog; Microwave technology; Organizing; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676294
Filename
4676294
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