Title :
GaN optical devices on free-standing GaN substrates
Author :
Tae-kyung Yoo ; Yoonho Choi
Author_Institution :
OE Group, LG CIT, Seoul, South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaN substrates and technical issues for surface damage and stability of GaN substrates.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; substrates; vapour phase epitaxial growth; GaN; GaN optical devices; GaN substrates; HVPE; free-standing GaN substrates; free-standing conducting GaN substrate; homoepitaxially grown LED; hydride vapor phase epitaxy; stability; surface damage; top-bottom contact; Commercialization; Dielectric substrates; Diode lasers; Dry etching; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical devices; Stability; Zinc;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811414
