DocumentCode :
3397540
Title :
L-BAND GaAs MMIC amplifier
Author :
Bezus, S.V. ; Tolstolutskiy, S.I. ; Lee, A.I. ; Tolstolutskaja, A.V. ; Kazatchkov, V.V. ; Komor, V.P.
Author_Institution :
Res. Inst. of Radiocommun., Rostov-on-Don
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
73
Lastpage :
74
Abstract :
MMIC amplifier development results have been presented. The amplifier chip with dimensions of 2.0 times 1.8 mm2 has been made to provide gain about 6 dB and VSWR 1.6.
Keywords :
MMIC amplifiers; amplification; L-band MMIC amplifier; VSWR; gain; Gallium arsenide; Helium; Hidden Markov models; IEEE catalog; L-band; MMICs; Microwave technology; Organizing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676296
Filename :
4676296
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3397540
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