DocumentCode :
3397572
Title :
Key technologies for solid state lighting
Author :
Luo, Yi ; Han, Yanjun ; Qian, Keyuan
Author_Institution :
Tsinghua Univ., Beijing
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
42
Lastpage :
43
Abstract :
The latest development of the key technologies including improvement of the internal quantum efficiency and external quantum efficiency of the high-power GaN-based LEDs, packaging and system application was reviewed and analyzed in detail.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor device packaging; semiconductor device reliability; wide band gap semiconductors; LED application technology; LED packaging; external quantum efficiency; high-power GaN-based LEDs; internal quantum efficiency; solid state lighting technology; Gallium nitride; LED lamps; Laboratories; Light emitting diodes; Light sources; Packaging; Power system reliability; Solid state lighting; Strain control; Thermal management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302864
Filename :
4302864
Link To Document :
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