DocumentCode :
3397584
Title :
IMPROVED VOLTAGE HOLD-OFF CAPABILITY OF PHOTOCONDUCTIVE SILICON IN SF6 ENVIRONMENT
Author :
Madangarli, V.P. ; Gradinaru, G. ; Zutavern, Fred J. ; Sudarshan, T.S. ; Loubriel, G.M.
fYear :
1992
fDate :
23-25 Jun 1992
Firstpage :
297
Keywords :
Breakdown voltage; Electric breakdown; Flashover; Metallization; Photoconductivity; Semiconductor device breakdown; Silicon; Sulfur hexafluoride; Switches; Vacuum breakdown;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 1992. Conference Record of the 1992 Twentieth
Print_ISBN :
0-7803-0718-6
Type :
conf
DOI :
10.1109/MODSYM.1992.492629
Filename :
492629
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3397584
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