Title :
Evaluation of the Schottky barrier parameters in the micron-size metal-semiconductor contacts
Author :
Averin, S.V. ; Lyubchenko, V.E.
Author_Institution :
Inst. of Radioengineering & Electron., Russian Acad. of Sci., Fryazino
Abstract :
We show that under certain conditions the submillimeter wave detector response of a Schottky barrier diode is a linear function of applied bias and allows evaluating the barrier height and the near-surface doping level of semiconductor in the micron-size Schottky barrier contacts.
Keywords :
Schottky barriers; Schottky diodes; semiconductor doping; semiconductor-metal boundaries; submillimetre wave detectors; Schottky barrier diode; linear function; metal-semiconductor contacts; near-surface doping level; submillimeter wave detector; Bills of materials; Gallium arsenide; Gold; Helium; Indium tin oxide; Microwave technology; Organizing; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676305
