Title :
The research of the static silicon avalanche diode’s characteristics in super wide noise generator mode
Author :
Loshitskyi, P.P. ; Pavlyuchenko, A.V.
Author_Institution :
Nat. Tech. Univ. of Ukraine "KPI", Kiev
Abstract :
Static characteristics of silicon double drift avalanche diode in noise generator mode in 3-mm waveband range with ENR level more than 55 dB in more than 20 % frequency band with plusmn1.5 dB irregularity research was held. The presence of differential negative resistance in static characteristics which provide low-frequency noise in microwave band transferring was shown due the research.
Keywords :
avalanche diodes; electrical resistivity; elemental semiconductors; noise generators; silicon; Si; differential negative resistance; low-frequency noise; microwave band; silicon double drift avalanche diode; super wide noise generator mode; Character generation; Diodes; Frequency; Helium; Noise generators; Noise level; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676307
