DocumentCode
3397734
Title
Harmonic generation in transfer electron GaN diodes with impact ionization
Author
Botsula, O.V. ; Pavlenko, D.V. ; Prokhorov, E.D. ; Vilnivetsky, S.S.
Author_Institution
V. N. Karazin Kharkov Nat. Univ., Kharkov
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
109
Lastpage
110
Abstract
Impact ionization in GaN diodes have been considered. The reference compounds are perspective for fabricating of centimeter and millimeter wave range transferred electron devices operating at input ionization conditions (electric field above 3 or 5 times of the threshold field and efficiency of 11...13 % ) have been shown. The value of GaN transfer electron devices oscillation efficiency to be obtained at harmonic operation has been demonstrated.
Keywords
III-V semiconductors; gallium compounds; impact ionisation; semiconductor diodes; GaN; harmonic generation; harmonic operation; impact ionization; millimeter wave range transferred electron devices; transfer electron GaN diodes; Diodes; Electrons; Frequency conversion; Gallium arsenide; Gallium nitride; Helium; Impact ionization; Indium tin oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676309
Filename
4676309
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