• DocumentCode
    3397816
  • Title

    5-6 GHz band GaAs MMIC five bit digital attenuator

  • Author

    Osipov, A.M. ; Semyonova, L.M. ; Radchenko, V.V.

  • Author_Institution
    CC "SPE "Planeta-Argall", Veliky Novgorod
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    The results of design of the MMIC of five-bit microwave frequency attenuator are presented. The attenuator is executed on a crystal of gallium arsenide with dimensions 2.6 times 1.6 mm2 and provides in a strip of frequencies 5 - 6 GHz signal amplitude control in a band 0 - 31 dB with a step 1 dB and initial losses - 6 dB. Research of a channel resistance of the transistor made on two types of epitaxial structures is carried out.
  • Keywords
    III-V semiconductors; MMIC; attenuators; digital integrated circuits; electric resistance; gallium arsenide; GaAs; MMIC; channel resistance; digital attenuator; epitaxial structures; five-bit microwave frequency attenuator; frequency 5 GHz to 6 GHz; gallium arsenide crystal; Attenuators; Electron mobility; Gallium arsenide; Helium; MMICs; Microwave technology; Organizing; PHEMTs; PIN photodiodes; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676314
  • Filename
    4676314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3397816