Title :
5-6 GHz band GaAs MMIC five bit digital attenuator
Author :
Osipov, A.M. ; Semyonova, L.M. ; Radchenko, V.V.
Author_Institution :
CC "SPE "Planeta-Argall", Veliky Novgorod
Abstract :
The results of design of the MMIC of five-bit microwave frequency attenuator are presented. The attenuator is executed on a crystal of gallium arsenide with dimensions 2.6 times 1.6 mm2 and provides in a strip of frequencies 5 - 6 GHz signal amplitude control in a band 0 - 31 dB with a step 1 dB and initial losses - 6 dB. Research of a channel resistance of the transistor made on two types of epitaxial structures is carried out.
Keywords :
III-V semiconductors; MMIC; attenuators; digital integrated circuits; electric resistance; gallium arsenide; GaAs; MMIC; channel resistance; digital attenuator; epitaxial structures; five-bit microwave frequency attenuator; frequency 5 GHz to 6 GHz; gallium arsenide crystal; Attenuators; Electron mobility; Gallium arsenide; Helium; MMICs; Microwave technology; Organizing; PHEMTs; PIN photodiodes; Topology;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676314
