Mass Production of Advanced Nanostructures for Optoelectronic Applications

To address the challenges of solid-state white lighting we have developed two designated metal-organic vapor phase epitaxy (MOVPE) mass production systems, the CRIUS^reg close-coupled showerhead (CCS) and AIX 2800G4 HT Planetary Reactor^reg tools with capacities of 30times2 inch and 42times2 inch, respectively. Uniformity over all wafers in a run of layers emitting in the blue spectral range was below 1 nm standard deviation on wafer and plusmn0.85 nm from wafer to wafer. Previous work on silicon (Si) and lithium aluminate (LiAIO₂) in an R&D reactor have shown the capability of these substrates for the GaN-based epitaxy and their impact for the mass production. Si is a low cost substrate and can be seen as an alternative to sapphire and silicon carbide (SiC). UAIO₂ offers the possibility for the growth of m-plane GaN. These layers are free of polarization fields in growth directions.