CMOS optical receiver with integrated InGaAs thin-film inverted MSM detector operating up to 250 Mbps

Author

Lee, Myunghee ; Vendier, Olivier ; Brooke, Martin A. ; Jokerst, Nan Marie ; Leavitt, Richard P.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

17

Lastpage

19

Abstract

We report that an amplifier has been fabricated in a 0.6 /spl mu/m digital CMOS foundry, and integrated with an InGaAs inverted metal-semiconductor-metal (I-MSM) photodetector sensitive to 1.3 /spl mu/m/1.5 /spl mu/m light, and characterized up to 250 Mbps.

Keywords

CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; thin film devices; 0.6 mum; 1.3 mum; 1.5 mum; CMOS optical receiver; InGaAs; InGaAs inverted metal-semiconductor-metal photodetector sensitivity; digital CMOS foundry; integrated InGaAs thin-film inverted MSM detector; CMOS technology; Detectors; Fingers; Indium gallium arsenide; Microelectronics; Optical amplifiers; Optical films; Optical materials; Optical receivers; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540725

Filename

540725