DocumentCode :
3397943
Title :
Graded band gap diodes with static domain
Author :
Storozhenko, I.P. ; Prokhorov, E.D. ; Botsula, O.V. ; Arkusha, Yu V.
Author_Institution :
V. N. Karazin Kharkov Nat. Univ., Kharkov
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
141
Lastpage :
142
Abstract :
A double-temperature model of inter-valley electron transfer (IET) is used to study the avalanche effect in graded band gap Alx(z)Ga1-x(z)As diodes with IET. It is demonstrated that the graded band gap crystals enable decrease voltage of avalanche effect in static domain. This effect is useful in noise diodes with static domain and IMPATT diodes.
Keywords :
III-V semiconductors; aluminium compounds; avalanche diodes; energy gap; gallium arsenide; semiconductor diodes; AlGaAs; IMPATT diodes; graded band gap crystals; graded band gap diodes; inter-valley electron transfer; noise diodes; Diodes; Gallium arsenide; Helium; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676323
Filename :
4676323
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3397943
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