Frequency dispersion in GaAs metal-semiconductor field-effect transistor transconductance

A quasi-2D numerical model a GaAs metal-semiconductor field-effect transistor, which drops the conventional sharp-boundary approximation, is presented. Using this model, both the low- and the high-frequency transistor transconductance is calculated. It is shown that the transconductance shows marked frequency dispersion in the drain current saturation region, which may have a significant impact on the small-signal voltage gain of a transistor amplifier.