DocumentCode
3398008
Title
The influence of barrier height on the current sensitivity of a microwave Schottky detector
Author
Shnitnikov, A.S. ; Gudkova, N.B.
Author_Institution
Moscow Power Eng. Inst., Tech. Univ., Moscow
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
149
Lastpage
150
Abstract
The properties of silicon Schottky diodes are studied using a one-dimensional physical-topological model. Diode current-voltage characteristics and detector current versus dissipated power are computed. The influence of the diode barrier height on the low-power current sensitivity is investigated.
Keywords
Schottky diodes; microwave diodes; barrier height; current sensitivity; diode current-voltage characteristics; microwave Schottky detector; silicon Schottky diodes; Current-voltage characteristics; Detectors; Power engineering; Schottky diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676327
Filename
4676327
Link To Document