• DocumentCode
    3398041
  • Title

    Semiconductor surface quality influence on MESFET’s parameters

  • Author

    Martynov, Y.B. ; Pogorelova, E.W.

  • Author_Institution
    FSUE RPC Istok, Fryazino
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    153
  • Lastpage
    154
  • Abstract
    Surface energy states form parasitic p-n junction which influences greatly not only MESFETpsilas breakdown voltage but also its microwave parameters.
  • Keywords
    Schottky gate field effect transistors; electric breakdown; p-n junctions; surface energy; MESFET breakdown voltage; microwave parameters; parasitic p-n junction; semiconductor surface quality; surface energy states; MESFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676329
  • Filename
    4676329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3398041