Title :
Semiconductor surface quality influence on MESFET’s parameters
Author :
Martynov, Y.B. ; Pogorelova, E.W.
Author_Institution :
FSUE RPC Istok, Fryazino
Abstract :
Surface energy states form parasitic p-n junction which influences greatly not only MESFETpsilas breakdown voltage but also its microwave parameters.
Keywords :
Schottky gate field effect transistors; electric breakdown; p-n junctions; surface energy; MESFET breakdown voltage; microwave parameters; parasitic p-n junction; semiconductor surface quality; surface energy states; MESFETs;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676329
