Effect of lateral-field distribution on hot-carrier analysis in short-channel MOSFETs

A previously developed quasi-two-dimensional model is used to examine the effect of the lateral-field distribution in the drain region on the different components of current in short-channel MOSFETs. Uniform, linear, and parabolic distributions are included in the model for the first time. Hot-carrier currents are found to be consistent with the experimental data available in the literature when a linear field distribution is assumed. The gate current is shown to be more sensitive than the substrate current to the selection of the field distribution. The more nonlinear the field distribution is, the longer the minimum channel length for reliable MOSFETs will be. Devices less than 0.5 μm in channel-length are insensitive to the field distribution