Silicon models of lateral inhibition

Author

Wolpert, Seth

Author_Institution

Dept. of Electr. Eng., Maine Univ., Orono, ME, USA

fYear

1991

fDate

14-17 May 1991

Firstpage

788

Abstract

Lateral inhibition is characterized in two CMOS VLSI-based sensory arrays with different pixel geometries and inhibitory algorithms. In these arrays, each sensory pixel inhibits, and in turn, is inhibited by each of its immediate neighbors. Test results indicate that both circuits are able to enhance the contrast of arbitrary two-dimensional images, and do so in a manner that is dynamically stable. Achieving this enhancement on sensory images immediately and simultaneously, this operation offers performance at a level not obtainable by software methods. As such, it is well suited for machine vision systems that utilize parallel architectures

Keywords

CMOS integrated circuits; VLSI; computer vision; image sensors; neural chips; physiological models; CMOS; Si models; VLSI-based sensory arrays; image processing; inhibitory algorithms; lateral inhibition; machine vision systems; neurophysiological phenomenon; parallel architectures; pixel geometries; two-dimensional images; CMOS image sensors; Circuit testing; Laplace equations; MOSFETs; Optical amplifiers; Optical arrays; Pixel; Retina; Sensor arrays; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-0620-1

Type

conf

DOI

10.1109/MWSCAS.1991.251995

Filename

251995