DocumentCode :
3398208
Title :
VLSI implementation of neural-type cell with MOS linear resistor
Author :
Moon, G. ; Zaghloul, M.E. ; Newcomb, R.W.
Author_Institution :
Dept. Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA
fYear :
1991
fDate :
14-17 May 1991
Firstpage :
784
Abstract :
A CMOS integrated circuit for the weighted synapse and the summation of the synaptic signals is presented. Neural-type cells (NTCs) are used as the processing elements along with a voltage-controlled linear MOS resistor. This variable resistor is used to control the synaptic weights as pulse densities, and thus the weights are controlled by the gate control voltage. By adding buffered inverter stages, the output signal of the NTC is converted into the normalized pulse stream of the 5 Vp-p signal for easy handling. The summation is executed by a capacitor integration circuit where the currents from different NTCs are accumulated. Simulation results are presented
Keywords :
CMOS integrated circuits; VLSI; neural chips; CMOS integrated circuit; MOS linear resistor; VLSI implementation; buffered inverter stages; capacitor integration circuit; neural-type cell; synaptic signals summation; variable resistor; voltage-controlled resistor; weighted synapse; Capacitors; Circuits; Frequency; Pulse inverters; Pulse width modulation inverters; Resistors; Space vector pulse width modulation; Very large scale integration; Voltage control; Weight control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-0620-1
Type :
conf
DOI :
10.1109/MWSCAS.1991.251996
Filename :
251996
Link To Document :
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