Multiple attachment GaAs-on-Si hybrid optoelectronic/VLSI chips

Author

Goossen, K.W. ; Tseng, B. ; Hui, S.P. ; Walker, J.A. ; Leibenguth, R. ; Chirovsky, L.M.F. ; Krishnamoort, A.

Author_Institution

Bell Lab., Lucent Technol., Holmdel, NJ, USA

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

24

Lastpage

25

Abstract

For several years we have been developing an optoelectronic/VLSI (OE/VLSI) chip technology based on flipchip bonding of GaAs optoelectronic chips onto CMOS silicon followed by substrate removal. Our optoelectronic devices are currently surface normal modulators, which also function as the input detectors. Finally, we have demonstrated an OE/VLSI switching chip with >140000 CMOS gates and 4352 modulators that operated with a clock rate of 400 Mbit/sec.

Keywords

CMOS integrated circuits; III-V semiconductors; VLSI; clocks; electro-optical modulation; electro-optical switches; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical interconnections; photodetectors; silicon; smart pixels; substrates; 400 Mbit/s; CMOS gates; CMOS silicon; GaAs optoelectronic chips; GaAs-Si; GaAs-on-Si hybrid optoelectronic/VLSI chips; OE/VLSI switching chip; Si; clock rate; flipchip bonding; input detectors; multiple attachment; optoelectronic devices; substrate removal; surface normal modulators; Bonding; CMOS technology; Circuits; Clocks; Detectors; Gallium arsenide; Optical receivers; Silicon; Surface emitting lasers; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540728

Filename

540728