DocumentCode :
3398358
Title :
Multiple attachment GaAs-on-Si hybrid optoelectronic/VLSI chips
Author :
Goossen, K.W. ; Tseng, B. ; Hui, S.P. ; Walker, J.A. ; Leibenguth, R. ; Chirovsky, L.M.F. ; Krishnamoort, A.
Author_Institution :
Bell Lab., Lucent Technol., Holmdel, NJ, USA
fYear :
1996
fDate :
5-9 Aug. 1996
Firstpage :
24
Lastpage :
25
Abstract :
For several years we have been developing an optoelectronic/VLSI (OE/VLSI) chip technology based on flipchip bonding of GaAs optoelectronic chips onto CMOS silicon followed by substrate removal. Our optoelectronic devices are currently surface normal modulators, which also function as the input detectors. Finally, we have demonstrated an OE/VLSI switching chip with >140000 CMOS gates and 4352 modulators that operated with a clock rate of 400 Mbit/sec.
Keywords :
CMOS integrated circuits; III-V semiconductors; VLSI; clocks; electro-optical modulation; electro-optical switches; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical interconnections; photodetectors; silicon; smart pixels; substrates; 400 Mbit/s; CMOS gates; CMOS silicon; GaAs optoelectronic chips; GaAs-Si; GaAs-on-Si hybrid optoelectronic/VLSI chips; OE/VLSI switching chip; Si; clock rate; flipchip bonding; input detectors; multiple attachment; optoelectronic devices; substrate removal; surface normal modulators; Bonding; CMOS technology; Circuits; Clocks; Detectors; Gallium arsenide; Optical receivers; Silicon; Surface emitting lasers; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-3175-3
Type :
conf
DOI :
10.1109/LEOSST.1996.540728
Filename :
540728
Link To Document :
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