DocumentCode :
3398390
Title :
Size effect of partial discharge in solid void defects
Author :
Gao, Wensheng ; Su, Ning ; Yin, Qingduo
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear :
2009
fDate :
19-23 July 2009
Firstpage :
501
Lastpage :
504
Abstract :
The void defect in solid insulation can be considered as one of the important defects which will induce partial discharges (PD) and insulation degradation. In this paper, the relations between the cylindrical void size and PD characteristics are presented and summarized particularly. The PD inceptive electrical field (PDIE), the maximal PD magnitude and the impulse waveforms are especially studied with different void defects´ depths and diameters. These PD characteristics, especially for PD impulse waveforms, changed dramatically with the increase of void size, which imply the various ionization states in PD process. The results show that large size voids always induce low PDIE and large maximal PD magnitude, which confirm the certain relations between insulation degradation degree and PD characteristics. Some of the results show that the PD with more residual ions may cause much serious degradation of solid insulations. The floating electrode defect test has been designed as a proving trial lastly.
Keywords :
electric strength; insulating materials; ion beam effects; ionisation; partial discharges; voids (solid); cylindrical void size; floating electrode defect test; impulse waveforms; insulation degradation; ionization states; partial discharge inceptive electrical field; partial discharge magnitude; residual ions; size effect; solid insulation; solid void defects; Aging; Circuit testing; Coupling circuits; Degradation; Dielectric materials; Dielectrics and electrical insulation; Electrons; Partial discharges; Solids; Voltage; Partial Discharge; degradation degree; residual ions; size effect; void defects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
Type :
conf
DOI :
10.1109/ICPADM.2009.5252380
Filename :
5252380
Link To Document :
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