Title :
Preparation and Electrical Characterization of Li-Doped MgZnO Thin-Film Transistors
Author :
Song Gao ; Dong Zhan Zhou ; Li Xin Yi ; Xi Qing Zhang ; Yong Sheng Wang
Author_Institution :
Inst. of Optoelectron. Technol., Beijing Jiaotong Univ., Beijing, China
Abstract :
The preparation and electrical characterization of bottom-gate Li-doped MgZnO thin film transistors were studied in this paper. These Li-doped MgZnO thin films were deposited on SiO2/Si substrates employing radio frequency magnetron sputtering at room temperature. This electrical characterization showed the mobility of 9.4 cm2/V·s, a VTH of -7 V and a large on/off current ratio of 1.4 ×107 for Li-doped MgZnO TFT.
Keywords :
II-VI semiconductors; lithium; magnesium compounds; semiconductor device manufacture; semiconductor device testing; semiconductor doping; silicon compounds; sputter deposition; thin film transistors; wide band gap semiconductors; MgZnO:Li; SiO2-Si; TFT; bottom-gate thin film transistors; electrical characterization; radio frequency magnetron sputtering; room temperature; voltage -7 V; Annealing; Films; Logic gates; Physics; Sputtering; Thin film transistors; Zinc oxide; Li-doped MgZnO; mobility; on/off ratio; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2015.2396055
