Preparation and Electrical Characterization of Li-Doped MgZnO Thin-Film Transistors

Author

Song Gao ; Dong Zhan Zhou ; Li Xin Yi ; Xi Qing Zhang ; Yong Sheng Wang

Author_Institution

Inst. of Optoelectron. Technol., Beijing Jiaotong Univ., Beijing, China

Volume

11

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

149

Lastpage

151

Abstract

The preparation and electrical characterization of bottom-gate Li-doped MgZnO thin film transistors were studied in this paper. These Li-doped MgZnO thin films were deposited on SiO₂/Si substrates employing radio frequency magnetron sputtering at room temperature. This electrical characterization showed the mobility of 9.4 cm²/V·s, a VTH of -7 V and a large on/off current ratio of 1.4 ×10⁷ for Li-doped MgZnO TFT.

Keywords

II-VI semiconductors; lithium; magnesium compounds; semiconductor device manufacture; semiconductor device testing; semiconductor doping; silicon compounds; sputter deposition; thin film transistors; wide band gap semiconductors; MgZnO:Li; SiO₂-Si; TFT; bottom-gate thin film transistors; electrical characterization; radio frequency magnetron sputtering; room temperature; voltage -7 V; Annealing; Films; Logic gates; Physics; Sputtering; Thin film transistors; Zinc oxide; Li-doped MgZnO; mobility; on/off ratio; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2396055

Filename

7018894