Title :
A Phase Detector design with wide input range of high frequency for GaAs HBT
Author :
Ying Liu ; Yu-Ming Zhang ; Hong-Liang Lu ; Yi-Men Zhang ; Jin-Can Zhang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A wide input range of high frequency Phase Detector(PD) is designed based on WIN Foundry 1μm GaAs HBT technology. The Gilbert Cell topology, the core of the PD, is used in PD design which can be operated from 500MHz to 20GHz with supply voltage of 7 V. The output voltage range in the wide frequency range is higher than 1V with phase changes from -180o to 180o, even reaches 2.5V at 10GHz.
Keywords :
III-V semiconductors; UHF transistors; gallium arsenide; heterojunction bipolar transistors; microwave transistors; phase detectors; GaAs; Gilbert cell topology; WIN Foundry GaAs HBT technology; frequency 500 MHz to 20 GHz; high frequency phase detector; size 1 mum; voltage 7 V; wide input range; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Microwave circuits; Phase frequency detector; Phase locked loops;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466689
