DocumentCode :
3398437
Title :
Electrical Characteristics of GaAs Nanoneedles
Author :
Chase, Christopher ; Huang, Mike ; Chuang, Linus ; Moewe, Michael ; Chang-Hasnain, Connie
Author_Institution :
California Univ. Berkeley, Berkeley
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
124
Lastpage :
125
Abstract :
Electrical contacts were formed to GaAs nanoneedles, and the electrical characteristics of the nanoneedles studied. Annealing conditions for the devices were optimized in order to obtain Ohmic contacts to the nanoneedles.
Keywords :
III-V semiconductors; annealing; gallium arsenide; nanostructured materials; ohmic contacts; GaAs; Ohmic contacts; annealing; electrical contacts; nanoneedles; Electric variables; Fabrication; Gallium arsenide; Nanoscale devices; Nanowires; Needles; Ohmic contacts; Rapid thermal annealing; Semiconductor nanostructures; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302913
Filename :
4302913
Link To Document :
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