DocumentCode
3398437
Title
Electrical Characteristics of GaAs Nanoneedles
Author
Chase, Christopher ; Huang, Mike ; Chuang, Linus ; Moewe, Michael ; Chang-Hasnain, Connie
Author_Institution
California Univ. Berkeley, Berkeley
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
124
Lastpage
125
Abstract
Electrical contacts were formed to GaAs nanoneedles, and the electrical characteristics of the nanoneedles studied. Annealing conditions for the devices were optimized in order to obtain Ohmic contacts to the nanoneedles.
Keywords
III-V semiconductors; annealing; gallium arsenide; nanostructured materials; ohmic contacts; GaAs; Ohmic contacts; annealing; electrical contacts; nanoneedles; Electric variables; Fabrication; Gallium arsenide; Nanoscale devices; Nanowires; Needles; Ohmic contacts; Rapid thermal annealing; Semiconductor nanostructures; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302913
Filename
4302913
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