Title :
Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED
Author :
Lai Wang ; Luo, Yi ; Jiaxing Wang ; Li, Hongtao ; Xi, Guangyi ; Jiang, Yang ; Sun, Changzheng ; Han, Yanjun
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
The effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED was investigated. The tunneling recombination and the Mg diffusion models were used to explain the optimized Mg concentration.
Keywords :
III-V semiconductors; diffusion; doping profiles; gallium compounds; indium compounds; light emitting diodes; magnesium; tunnelling; wide band gap semiconductors; InGaN:Mg; Mg-doping; blue LED; capacitance-voltage characteristics; diffusion models; dopant concentration; light power-current characteristics; tunneling recombination; Capacitance-voltage characteristics; Gallium nitride; Integrated optoelectronics; Laboratories; Light emitting diodes; Quantum well devices; Radiative recombination; Sun; Temperature; Tunneling;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302916
