Title :
Study of the disturb in SONOS memory
Author :
Li-Juan Liu ; Guo-Fei Shen ; Gang Cao ; Liao, Shengcai
Author_Institution :
Dept. of Reliability Eng., Shanghai Hua Hong NEC Electron. Co. Ltd., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Disturb is a serious problem in SONOS. In this paper, read disturb, program disturb, and the effect of the operation between the adjacent cells are investigated. Gate voltage, drain voltage and E/P cycling will accelerate the threshold voltage (Vtp) drift of SONOS. 1.6V drain voltage in program mode and 1.6V gate voltage in read mode show free or minimal effect from all disturbs. The short erase and program time will reduce disturbs.
Keywords :
digital storage; E/P cycling; SONOS memory; drain voltage; gate voltage; program disturb; program time; read disturb; short erase; threshold voltage; voltage 1.6 V; Arrays; Leakage current; Logic gates; Nonvolatile memory; Programming; SONOS devices; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466695
