DocumentCode
3398567
Title
Charge injection cancellation in sample-data-comparators using programmable staggering of zeroing signals
Author
Mayes, Michael K. ; Chen, Ray R.
Author_Institution
National Semiconductor Corp., Santa Clara, CA, USA
fYear
1991
fDate
14-17 May 1991
Firstpage
719
Abstract
Comparator offsets resulting from charge injection of MOS switches vary over temperature, supply voltage, and process. These variations lead to difficulties in achieving optimum offset voltages. In a three-stage comparator design with current programmable delay times between autozero signals, optimum offset voltages are achieved over a wide range of operating conditions. By forcing a constant voltage swing on the feedback switches, channel charge injection dependence on effective threshold voltage levels leads to uncompensated offset errors
Keywords
MOS integrated circuits; analogue processing circuits; comparators (circuits); delays; feedback; sampled data systems; semiconductor switches; MOS switches; autozero signals; channel charge injection; charge injection cancellation; constant voltage swing; current programmable delay times; feedback switches; operating conditions; optimum offset voltages; programmable staggering; sample-data-comparators; three-stage comparator design; threshold voltage levels; uncompensated offset errors; zeroing signals; Clocks; Delay; Feeds; MOS capacitors; Operational amplifiers; Parasitic capacitance; Switches; Temperature; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-0620-1
Type
conf
DOI
10.1109/MWSCAS.1991.252011
Filename
252011
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