DocumentCode :
3398616
Title :
Application of self organizing map approach for partial discharge pattern recognition of insulators
Author :
Chang, Wen-Yeau
Author_Institution :
Dept. of Electr. Eng., St. John´´s Univ., Taipei, Taiwan
fYear :
2009
fDate :
19-23 July 2009
Firstpage :
449
Lastpage :
452
Abstract :
This paper proposes a self organizing map (SOM) based recognition method to identify the insulation defects of electrical apparatus arising from partial discharge (PD). PD patterns are detected by a PD detecting system set up in the laboratory. The significant features of PD patterns are extracted by using the nonlinear principal component analysis (NLPCA) method. Based on the feature extracted, the SOM network is further employed for the PD pattern recognition. To verify the proposed approach, experiments are conducted to demonstrate the field-test PD pattern recognition of insulators by using 250 feature vectors of field-test PD patterns. Five types of models with artificial defects are purposely created to produce five common PD activities of insulators for the experiments. The practical results show that the proposed method is promising as a solution to the PD pattern recognition.
Keywords :
feature extraction; insulators; partial discharges; power engineering computing; principal component analysis; self-organising feature maps; electrical apparatus; feature extraction; insulation defect identification; insulators; nonlinear principal component analysis method; partial discharge pattern recognition; selforganizing map approach; Dielectrics and electrical insulation; Feature extraction; Fuzzy systems; Hybrid intelligent systems; Laboratories; Multi-layer neural network; Organizing; Partial discharges; Pattern recognition; Transformers; Insulators; Nonlinear principal component analysis; Partial discharge; Pattern recognition; Self organizing map;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
Type :
conf
DOI :
10.1109/ICPADM.2009.5252392
Filename :
5252392
Link To Document :
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