Temperature-independence-point properties for 0.1 μm-scale pocket-implant technologies and the impact on circuit design

Author

Hisamitsu, K. ; Ueno, H. ; Tanaka, M. ; Kitamaru, D. ; Miura-Mattausch, M. ; Mattausch, H.J. ; Kumashiro, S. ; Yamaguchi, T. ; Yamashita, K. ; Nakayama, N.

Author_Institution

Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan

fYear

2003

fDate

21-24 Jan. 2003

Firstpage

179

Lastpage

183

Abstract

The temperature-independence point (TIP) of the drain current for MOS transistors in a 0.1 μm-scale pocket-implant technology is gate-length (L_g) dependent and has different magnitudes for n-MOSFET and p-MOSFET. Circuits such as ring-oscillators have a TIP, lying between the values for nand pMOSFET. The circuit TIP Is close to the n-MOSFET TIP for long L_g and gets closer to the p-MOSFET TIP for short L_g. The reason is the different temperature dependence of electron and hole mobility as a function of L_g. Due to the high field effect, oscillation periods of ring-oscillators with short L_g hardly improve, when the supply voltage is raised beyond the TIP. Therefore, an advantageous supply-voltage (V_DD) choice for pocket-implant technologies is near the TIP of circuits, allowing a favorable combination of short switching delay and minimized temperature dependence. By designing the V_th,p closer to V_th,n, not only the low power dissipation, due to the reduction of the TIP, but also the suppressed TIP fluctuation can be realized.

Keywords

CMOS integrated circuits; carrier mobility; integrated circuit technology; ion implantation; low-power electronics; 0.1 micron; MOSFET drain current; electron mobility; high field effect; hole mobility; low power dissipation; n-MOSFET; p-MOSFET; pocket-implant technology; ring-oscillators; short switching delay; supply-voltage; temperature-independence-point properties; Charge carrier processes; Circuit synthesis; Delay; Electron mobility; Fluctuations; MOSFET circuits; Power dissipation; Switching circuits; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 2003. Proceedings of the ASP-DAC 2003. Asia and South Pacific

Print_ISBN

0-7803-7659-5

Type

conf

DOI

10.1109/ASPDAC.2003.1195013

Filename

1195013