Effective radius models of nanoscale elliptical Surrounding-Gate MOSFETs

Author

Ping Xiang ; Guangxi Hu ; Guanghui Mei ; Ran Liu ; Lingli Wang ; Tingao Tang

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

Effective radius models for the nanoscale elliptical Surrounding-Gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are developed. The characteristics of the elliptical SG MOSFET are simulated with TCAD simulation tools, the electric potential, drain to source current, and the subthreshold swing are investigated. The simple effective radius models can be implanted in circuit simulations, and facilitate the practical use of the device.

Keywords

MOSFET; circuit simulation; electric potential; nanoelectronics; technology CAD (electronics); SG metal-oxide-semiconductor field-effect transistor; TCAD simulation tool; circuit simulation; drain to source current; electric potential; elliptical SG MOSFET; nanoscale elliptical surrounding-gate MOSFET; radius model; subthreshold swing; Electric potential; Integrated circuit modeling; MOSFETs; Mathematical model; Semiconductor process modeling; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6466719

Filename

6466719