DocumentCode
3398986
Title
High-efficiency AlGaInP LED with low thermal resistance fabricated by electroplating
Author
Wei, Wei ; Han, Yan-Jun ; Luo, Yi
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
184
Lastpage
185
Abstract
Higher light extraction efficiency AlGaInP-based LEDs were fabricated by using metallic substrate based on Cu and Cr electroplating technique, novel metal reflector and surface micro-structures.
Keywords
III-V semiconductors; aluminium compounds; electroplating; etching; gallium compounds; indium compounds; light emitting diodes; lithography; surface structure; thermal conductivity; AlGaInP; Cu-Cr; LED; electroplating; light extraction efficiency; lithographic patterning; metallic substrate; novel metal reflector; optical design software-Tracepro; surface microstructures; thermal resistance; wet etching; Chromium; Distributed Bragg reflectors; Gallium arsenide; Gold; Laboratories; Light emitting diodes; Substrates; Thermal resistance; Thermal stresses; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302943
Filename
4302943
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