Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Author

Min-Shuai Wang ; Lan Yang ; Xiao-Jing Huang

Author_Institution

Dept. of Phys., Jimei Univ., Xiamen, China

Volume

35

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

464

Lastpage

466

Abstract

An interesting structure of GaN-based light-emitting diodes (LEDs) with different indium-tin-oxide (ITO) films deposited on naturally textured V-shaped pits (V-pits) is fabricated and studied. The sputtered ITO assists the textured surface to get a better contact and thus reduces the forward voltage. Moreover, the ITO films prepared by different methods can serve as graded-refractive-index antireflective coatings, which can enhance the performance of the V-pits LED further. The results show that the V-pits LED with two layers ITO films have a stronger light output power than the reference LED by 52.1% at 20 mA, and the forward voltage is only a little higher than the standard LED.

Keywords

III-V semiconductors; antireflection coatings; gallium compounds; indium compounds; light emitting diodes; refractive index; semiconductor thin films; sputtered coatings; surface texture; wide band gap semiconductors; GaN; GaN-based LED; GaN-based light-emitting diodes; ITO; current 20 mA; forward voltage; graded-refractive-index antireflective coatings; indium-tin-oxide films; light output enhancement; naturally textured V-shaped pits; sputtered ITO; Indium tin oxide; Light emitting diodes; Optical refraction; Optical variables control; Refractive index; Surface morphology; Surface treatment; ITO; Light-emitting diode; refractive;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2304972

Filename

6747964