Study on the dielectric property of the impure silicon dioxide based on FEM

Researchers have been interested in the study of composite materials´ dielectric property for a long time. Composite materials can also be adjusted by selecting the matrix and inclusion, controlling their volume ratio, component geometry, distribution types and so on, to improve properties of the mixture materials. In this paper, for different impurities in silicon dioxide, Finite Element Method (FEM) is carried out to get the dielectric properties of the impure silicon dioxide, with the electric field changes in different volume ratio of impurities. The complex permittivity of two-phase media is calculated based on the Spherical body and ellipsoidal model with periodic boundary conditions. Then the results from FEM and the empirical formula which the inclusions are also embedded periodicity were compared. In the actual structure, composite materials exists interface which links inclusion materials with matrix. It is extremely important that its structure and properties has a direct impact on the performance of mixed media. Then a mixed-interface model is put forward and the impacts of the thickness and the conductivity of interface to dielectric properties are discussed. These researches have significant affects on the practical application of silicon dioxide.