DocumentCode
3399067
Title
The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency
Author
Zhang, Xian-Peng ; Han, Yan-Jun ; Luo, Yi ; Xue, Xiao-Lin ; Huang, Jin
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
194
Lastpage
195
Abstract
The parameters of nanostructure on p-GaN surface for light extraction efficiency of GaN based LEDs were studied by using Monte-Carlo ray tracing simulation, and nanostructures were fabricated by using interferential exposure and ICP dry etching.
Keywords
III-V semiconductors; Monte Carlo methods; etching; gallium compounds; light emitting diodes; materials preparation; nanostructured materials; nanotechnology; plasma materials processing; ray tracing; wide band gap semiconductors; GaN; GaN-based LED; Monte-Carlo ray tracing simulation; inductively coupled plasma dry etching; light extraction efficiency; nanostructure; Data mining; Dry etching; Fabrication; Gallium nitride; Laboratories; Light emitting diodes; Ray tracing; Rough surfaces; Substrates; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302948
Filename
4302948
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