DocumentCode :
3399095
Title :
Study on conductivity property of quartz based on molecular simulation
Author :
Xie, Xiaojun ; Cheng, Yonghong ; Li, Mang ; Jiang, Lili ; Luo, Naidong ; Yu, Sujiao ; Sun, Caixin
Author_Institution :
State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an, China
fYear :
2009
fDate :
19-23 July 2009
Firstpage :
349
Lastpage :
352
Abstract :
In quartz system, conductivity property, to a great extent, depends on defects, including intrinsic and extrinsic defects. In this paper, we introduce the different defects into quartz system. And then defect formation energies are calculated based on density functional theory. From the computed results, the positions and concentration of defects in quartz can be obtained. We also apply the molecular dynamics simulation to calculate dynamics properties for these different defects models. In the molecular dynamics, different forcefields are utilized to compute the dynamics property of these defects systems. Dissimilar results are obtained, however, by these different forcefields. Comparing the simulated results, we choose the most suitable forcefield for quartz system. Finally, conductivity of quartz in defects systems can be obtained accurately. From the calculated result, we can find that Na atom plays the dominant role for conductivity. The simulation results are consistent with experiment data well. And the molecular simulate research can help establish relationship between microcosmic structure and macroscopic property.
Keywords :
electrical conductivity; molecular dynamics method; quartz; SiO2; conductivity property; defect formation energies; molecular dynamics simulation; quartz; Chemical elements; Computational modeling; Conductivity; Density functional theory; Dielectric materials; Dielectrics and electrical insulation; Laboratories; Silicon; Sun; Temperature; conductivity property; density functional theory; dynamics; forcefield; quartz;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
Type :
conf
DOI :
10.1109/ICPADM.2009.5252415
Filename :
5252415
Link To Document :
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