• DocumentCode
    3399097
  • Title

    Room Temperature Inductively Coupled Plasma Etching of InP-Based Semiconductors Using Cl2/N2 and Cl2/N2/Ar Mixtures

  • Author

    Zhou, Qiwei ; Sun, Changzheng ; Wang, Jian ; Xiong, Bing ; Luo, Yi

  • Author_Institution
    Tsinghua Univ., Beijing
  • fYear
    2007
  • fDate
    July 29 2007-Aug. 11 2007
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    Room temperature etching of InP is carried out using Cl2/N2 and Cl2/N2/Ar inductively coupled plasma (ICP). The surface roughness and anisotropy obtained with different etching conditions are presented.
  • Keywords
    III-V semiconductors; etching; indium compounds; plasma materials processing; silicon; surface roughness; InP:Si; RF power; chamber pressure; flow rate; inductively coupled plasma dry etching technique; semiconductors; silicon-doped (100) InP substrates; surface roughness; temperature 293 K to 298 K; Anisotropic magnetoresistance; Argon; Dry etching; Indium phosphide; Plasma applications; Plasma chemistry; Plasma density; Plasma temperature; Radio frequency; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1591-5
  • Type

    conf

  • DOI
    10.1109/INOW.2007.4302950
  • Filename
    4302950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3399097