DocumentCode :
3399172
Title :
Dielectric relaxation phenomena of ultrafine BaTiO3
Author :
Bai, Suna ; Li, Shengtao ; Zou, Chen ; Li, Jianying ; Zhang, Yunxia
Author_Institution :
State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an, China
fYear :
2009
fDate :
19-23 July 2009
Firstpage :
333
Lastpage :
336
Abstract :
This paper investigated the dielectric relaxation phenomena on ultrafine BaTiO3. The ultrafine BaTiO3 particles were prepared by hydrothermal method with a size ranging from 100 nm to 260 nm. The precursors used in the preparation were Ba(OH)2middot8H2O powder and TiO2 powder. Temperature dependence of dielectric constant at various frequencies was experimentally investigated. The dielectric relaxation phenomena was successfully observed by studying the temperature spectra of dielectric properties that the dielectric peak as a function of temperature Tm is no longer the same, it shifts to the lower temperature with an increase of the frequency. It was also observed that the dielectric constant decreases with an increase of average particle size. Some possible reasons for the dielectric relaxation phenomena on ultrafine BaTiO3 were discussed in this study.
Keywords :
barium compounds; dielectric relaxation; ferroelectric materials; permittivity; BaTiO3; average particle size; dielectric constant; dielectric properties; dielectric relaxation; hydrothermal method; size 100 nm to 260 nm; Containers; Dielectric materials; Dielectric measurements; Ferroelectric materials; Frequency; Permittivity measurement; Powders; Steel; Temperature dependence; X-ray scattering; BaTiO3; dielectric relaxation; hydrothermal method; phase transition; ultrafine;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
Type :
conf
DOI :
10.1109/ICPADM.2009.5252419
Filename :
5252419
Link To Document :
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