Title :
Sidewall smoothing of Si/SiO2 waveguide by excimer laser reformation
Author :
Hung, Shih-Che ; Liang, Eih-Zhe ; Lin, Ching-Fuh
Author_Institution :
Nat. Taiwan Univ., Taipei
fDate :
July 29 2007-Aug. 11 2007
Abstract :
Smoothing as-etched Si/SiO2 waveguides by laser illumination results in less damage than furnace-treated one and atomic-force-microscopy measurement on the reformed surface gives root-mean-square roughness of 0.24 nm and leads to 0.04 dB/cm of calculated scattering loss.
Keywords :
atomic force microscopy; elemental semiconductors; optical waveguides; semiconductor-insulator boundaries; silicon; silicon compounds; surface roughness; surface treatment; Si-SiO2; atomic force microscopy; excimer laser reformation; root-mean-square roughness; sidewall smoothing; waveguide; Atom lasers; Atomic beams; Atomic measurements; Lighting; Loss measurement; Rough surfaces; Smoothing methods; Surface roughness; Surface waves; Waveguide lasers;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302958
