Title :
Influence of low-V/III intermediate layer on GaN grown on patterned sapphire substrate by MOVPE
Author :
Jiang, Yang ; Luo, Yi ; Wang, Lai ; Li, Hongtao ; Xi, Guangyi ; Zhao, Wei ; Han, Yanjun
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
By inserting a low-V/III intermediate layer between bulk GaN and initial growth layer, the crystal quality of GaN grown on patterned sapphire substrate (PSS) by MOVPE was improved, which can be explained by dislocation bending mechanism.
Keywords :
III-V semiconductors; dislocations; gallium compounds; vapour phase epitaxial growth; GaN; MOVPE; crystal quality; dislocation bending; low-V/lll intermediate layer; patterned sapphire substrate; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Epitaxial growth; Epitaxial layers; Etching; Gallium nitride; Laboratories; Surface morphology; X-ray scattering;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302959
