DocumentCode
3399247
Title
Influence of low-V/III intermediate layer on GaN grown on patterned sapphire substrate by MOVPE
Author
Jiang, Yang ; Luo, Yi ; Wang, Lai ; Li, Hongtao ; Xi, Guangyi ; Zhao, Wei ; Han, Yanjun
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
216
Lastpage
217
Abstract
By inserting a low-V/III intermediate layer between bulk GaN and initial growth layer, the crystal quality of GaN grown on patterned sapphire substrate (PSS) by MOVPE was improved, which can be explained by dislocation bending mechanism.
Keywords
III-V semiconductors; dislocations; gallium compounds; vapour phase epitaxial growth; GaN; MOVPE; crystal quality; dislocation bending; low-V/lll intermediate layer; patterned sapphire substrate; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Epitaxial growth; Epitaxial layers; Etching; Gallium nitride; Laboratories; Surface morphology; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302959
Filename
4302959
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