Title :
Modeling and separate extraction of bias-dependent and bias-independent S/D resistances in MOSFETs
Author :
Zebang Guo ; Zuochang Ye ; Xiaojian Li ; Yan Wang
Author_Institution :
Dept. of Microelectron. & Nanoelectron., Tsinghua Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
S/D resistance extraction is important in technology development to help extraction of channel carrier mobility and pinpoint the bottleneck of MOSFET performance. In this paper, a new method is proposed for accurate extraction of bias-dependent and bias-independent S/D resistances of advanced MOSFETs. This method is carried on an n-MOSFET with W/L=9um/60nm, and the results fit the experimental data accurately.
Keywords :
MOSFET; carrier mobility; electric resistance; semiconductor device models; MOSFET performance bottleneck; bias-dependent source-drain resistance; bias-independent source-drain resistance; channel carrier mobility; separate extraction; size 60 mum; size 9 mum; Bipolar transistors; Data models; Fitting; Logic gates; MOSFETs; Resistance; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466734
