Title :
ITO/AIN/AI Ohmic contact for p-GaN with high reliability and optical reflectivity
Author :
Ma, Hongxia ; Han, Yanjun ; Luo, Yi
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
ITO/AIN/AI scheme is proposed as ohmic contact to p-GaN with high reliability and optical reflectivity. The LEDs with ITO/AIN/AI contact exhibited better thermal stability, electrical and optical performance than ITO/AI and Ag-based ones.
Keywords :
III-V semiconductors; aluminium; aluminium compounds; indium compounds; light emitting diodes; reflectivity; reliability; thermal stability; wide band gap semiconductors; GaN; ITO-AlN-Al; LED; ohmic contact; optical reflectivity; reliability; thermal stability; Annealing; Artificial intelligence; Gallium nitride; Indium tin oxide; Light emitting diodes; Ohmic contacts; Optical buffering; Optical films; Reflectivity; Thermal degradation;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302963
