DocumentCode
3399315
Title
A compact model for the STI y-stress effect on deep submicron PDSOI MOSFETs
Author
Jianhui Bu ; Jinshun Bi ; Xianjun Ma ; Jiajun Luo ; Zhengsheng Han ; Haogang Cai
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
3
Abstract
The shallow trench isolation (STI) y-stress effect on deep submicron PDSOI MOSFETs was studied. Instance parameters SAy, SBy and model parameters a1, a2, b1, b2 were proposed to build a compact model for this effect. This model can be easily implemented in the SOI MOSFET compact model like BSIMSOI model. By using this model, we can simulate the STI y-stress effect well, especially for the changes of Idsat and Vtlin.
Keywords
MOSFET; isolation technology; semiconductor device models; silicon-on-insulator; BSIMSOI model; SAy; SBy; SOI MOSFET compact model; STI; deep submicron PDSOI MOSFET; shallow trench isolation y-stress effect; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Standards; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6466735
Filename
6466735
Link To Document