DocumentCode :
3399367
Title :
Dielectric spectroscopies of ZnO varistors with high voltage gradient under surge aging condition
Author :
Long, Wangcheng ; Hu, Jun ; Liu, Jun ; He, Jinliang ; Luo, Fengchao
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear :
2009
fDate :
19-23 July 2009
Firstpage :
289
Lastpage :
292
Abstract :
ZnO varistors have been widely used in power systems as metal oxide arresters (MOA) against overvoltage surges due to their excellent nonlinear current-voltage (I-V) characteristics and surge energy absorption capabilities. The MOA applied in power system with rated voltage usually has remarkable huge size, which results in great difficulty for MOA design and manufacture. Thus, ZnO varistors with higher voltage gradient have been developed, which can sufficiently shorten the height of MOA and solve above problems. However, the aging performances of ZnO varistors with high voltage gradient have not been revealed yet. In this paper, we studied the aging characteristics of ZnO varistor samples by comparing their dielectric spectroscopies before and after surge aging experiments, which were carried out under 8/20 mus surge currents. The experimental results indicate that ZnO varistors with high voltage gradient behave distinct aging performances.
Keywords :
II-VI semiconductors; arresters; overvoltage protection; power systems; varistors; wide band gap semiconductors; zinc compounds; ZnO; dielectric spectroscopy; high voltage gradient; metal oxide arresters; overvoltage surges; power systems; surge aging condition; surge currents; surge energy absorption; varistors; Absorption; Aging; Arresters; Dielectrics; Electrochemical impedance spectroscopy; Power systems; Surges; Varistors; Voltage control; Zinc oxide; ZnO varistor; aging property; dielectric spectroscopy; high voltage gradient;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
Type :
conf
DOI :
10.1109/ICPADM.2009.5252429
Filename :
5252429
Link To Document :
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