Title :
Variability in scaled MOSFETs: Measurements, analysis, and suppression
Author :
Hiramoto, Toshiro ; Kumar, Ajit ; Mizutani, Tomoko ; Saraya, Takuya
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The recent research activities on random variability in scaled bulk MOSFETs are described. Using a special test-element-group (TEG), threshold voltage (VTH) variability of as many as 10 billion transistors have been measured for the first time. For the suppression of variability, a novel self-suppression method of random variability in SRAM cells is proposed and demonstrated.
Keywords :
MOSFET; SRAM chips; semiconductor device testing; SRAM cell; TEG; random variability; scaled bulk MOSFET; self-suppression method; test-element-group; threshold voltage; transistor; variability suppression; Logic gates; SRAM cells; Semiconductor device measurement; Stress; Transistors; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466742
