• DocumentCode
    3399436
  • Title

    Red Emitting, High-Performance AlGaInAs Quantum Dot Lasers

  • Author

    Schlereth, T.W. ; Schneider, C. ; Gerhard, S. ; Kaiser, W. ; Höfling, S. ; Forchel, A.

  • Author_Institution
    Univ. Wurzburg, Wurzburg
  • fYear
    2007
  • fDate
    July 29 2007-Aug. 11 2007
  • Firstpage
    236
  • Lastpage
    237
  • Abstract
    We fabricated red emitting (763.7 nm) Al0.13Ga0.40ln0.47As quantum dot (QD) distributed feedback (DFB) lasers. The devices exhibit output powers >20 mW, threshold currents as low as 34 mA and side mode suppression ratios of 40 dB.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; visible spectra; AlGaInAs; DFB laser diodes; current 34 mA; distributed feedback lasers; emission wavelength; oxygen absorption spectroscopy; red emitting quantum dot lasers; side mode suppression ratios; threshold currents; wavelength 763.7 nm; Diode lasers; Distributed feedback devices; Laser feedback; Laser modes; Power generation; Quantum dot lasers; Quantum well lasers; Scanning electron microscopy; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1591-5
  • Type

    conf

  • DOI
    10.1109/INOW.2007.4302969
  • Filename
    4302969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3399436