Title :
Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes
Author :
Zhao, Wei ; Fei, Xiang ; Ma, Jun ; Luo, Yi
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
Temperature-dependent electroluminescence (EL) spectra of 1 mm times1 mm InGaN/GaN MQWs blue LED was investigated. The enhancement of the tunneling-recombination is found to be the key mechanism for the results.
Keywords :
III-V semiconductors; electroluminescence; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; tunnelling; wide band gap semiconductors; InGaN-GaN; blue LED; high-power blue multiple quantum wells light-emitting diodes; temperature-dependent electroluminescence; tunneling-recombination; Electroluminescence; Epitaxial growth; Gallium nitride; Heterojunctions; Integrated optoelectronics; Laboratories; Light emitting diodes; Quantum well devices; Temperature distribution; Voltage;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302970
