Title :
Temperature dependence of gain characteristics in p-doped 1.3-μm InAs quantum dot laser
Author :
Yukutake, T. ; Ishida, M. ; Hatori, N. ; Sudo, H. ; Yamamoto, T. ; Nakata, Y. ; Ebe, H. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Univ. of Tokyo, Tokyo
fDate :
July 29 2007-Aug. 11 2007
Abstract :
We report the measured temperature dependence of gain characteristics in p-doped 1.3-μm quantum-dot lasers and indicate the relationship between their temperature-stability around room temperature and behavior of holes at the ground-state supplied by p-doping.
Keywords :
III-V semiconductors; ground states; indium compounds; laser beams; quantum dot lasers; semiconductor doping; thermal stability; InAs; gain characteristics; gain-current characteristics; ground-state; p-doped quantum dot laser; temperature-stability; wavelength 1.3 μm; Bellows; Electronics industry; Gain measurement; Laser theory; Quantum dot lasers; Quantum dots; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302974
