Title :
Studies on Uniformity of MOVPE-Grown AlGaN/GaN HEMT Structures by Spectroscopic Ellipsometry
Author :
Xi, Guangyi ; Luo, Yi ; Wang, Lai ; Li, Hongtao ; Jiang, Yang ; Chen, Dong ; Zhao, Wei ; Han, Yanjun ; Hao, Zhibiao
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
The uniformities of AIGaN/GaN HEMT structures grown by MOVPE have been studied by using spectroscopic ellipsometry. The results show that the total flow rate is the most critical growth parameter for the uniformity.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; ellipsometry; gallium compounds; high electron mobility transistors; semiconductor growth; vapour phase epitaxial growth; AlGaN-GaN; HEMT structures; MOVPE-grown structures; critical growth parameter; spectroscopic ellipsometry; Aluminum gallium nitride; Ellipsometry; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Laboratories; Photonic band gap; Spectroscopy; Wavelength measurement;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302978
